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Revision: 09-Feb-10
V30100PW
Vishay General Semiconductor
New Product
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25
°C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage IR
= 1.0 mA T
J
= 25 °C V
BR
100 (minimum) - V
Instantaneous forward voltage per diode
IF
= 8 A
TJ
= 25 °C
= 15 A 0.83 0.91
VF
(1)
0.64 -
V
IF
IF
= 8 A
TJ
= 125 °C
= 15 A 0.68 0.76
0.58 -
IF
Reverse current
per diode
VR
= 70 V
TJ
= 25 °C
IR
(2)
= 25 °C 22 450 μA
6.3 - μA
TJ
= 125 °C 4.4 - mA
VR
= 100 V
TJ
TJ
= 125 °C 10 26 mA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30100PW UNIT
Typical thermal resistance
per diode
R
per device 1.4θJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-3PW V30100PW-M3/4W 4.5 4W 30/tube Tube
Resistive or Inductive Load
Average Forwar
d Current (A)
Case Temperature (°C)
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150
Mounted on Specifc Heatsink
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Average Power Lo
ss
(W)
D = tp/T tp
T
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